1 C4D20120D silicon carbide schottky diode z -r ec ? r ectifier features ? 1.2-kvolt schottky rectifer ? zero reverse recovery current ? high-frequency operation ? temperature-independent switching behavior ? positive temperature coeffcient on v f benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? switch mode power supplies ? power factor correction ? motor drives package to-247-3 maximum ratings (t c =25c unless otherwise specifed) symbol parameter value test conditions note v rrm repetitive peak reverse voltage 1200 v v rsm surge peak reverse voltage 1300 v v dc dc blocking voltage 1200 v i f continuous forward current (per leg/device) 34/68 16.5/33 10/20 a t c =25?c t c =135?c t c =157?c i frm repetitive peak forward surge current 47 * 31.5 * a t c =25?c, t p =10 ms, half sine pulse t c -110?c, t p =10 ms, half sine pulse i fsm non-repetitive peak forward surge current 71 * 59.5 * a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i f,max non-repetitive peak forward current 750* 620* a t c =25?c, t p =10 m s, pulse t c =110?c, t p =10 m s, pulse p tot power dissipation(per leg/device) 176/352 76/152 w t c =25?c t c =110?c t j operating junction range -55 to +175 ?c t stg storage temperature range -55 to +135 ?c to-247 mounting torque 1 8.8 nm lbf-in m3 screw 6-32 screw * per leg, ** per device part number package marking C4D20120D to-247-3 c4d20120 v rrm = 1200 v i f ( t c =135?c) = 33 a ** q c = 104 nc ** C4D20120D rev. c
2 figure 1. forward characteristics 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 3.5 i f forward current v f forward voltage figure 2. reverse characteristics 0 0.0001 0.0002 0.0003 0.0004 0.0005 0.0006 0.0007 0 500 1000 1500 2000 i r reverse current (a) v r reverse voltage v f forward voltage (v ) i f forward current (a) 20 18 16 14 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5 v r reverse voltage (v ) i r reverse current (a) 700 600 500 400 300 200 100 0 0 500 1000 1500 2000 electrical characteristics (per leg) symbol parameter typ. max. unit test conditions note v f forward voltage 1.5 2.2 1.8 3 v i f = 10 a t j =25c i f = 10 a t j =175c i r reverse current 30 55 250 350 a v r = 1200 v t j =25c v r = 1200 v t j =175c q c total capacitive charge 52 nc v r = 800 v, i f = 10a d i /d t = 200 a/s t j = 25c c total capacitance 754 45 38 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz v r = 800 v, t j = 25?c, f = 1 mhz note: 1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. max. unit test conditions note r jc thermal resistance from junction to case 0.85 * 0.43 ** c/w * per leg, ** per device typical performance (per leg) t j =-55c t j = 25c t j = 75c t j =125c t j =175c t j =-55c t j = 25c t j = 75c t j =125c t j =175c i f (a) v f (v) i r (a) v r (v) C4D20120D rev. c
3 60 80 100 120 peak forward current (a) 0 20 40 25 50 75 100 125 150 175 i f(peak) peak forward current (a) tc case temperature ( c) figure 3. current derating figure 4. power derating typical performance (per leg) 10% duty 20% duty 30% duty 50% duty 70% duty dc figure 5. recovery charge vs. reverse voltage figure 6. capacitance vs. reverse voltage i f(peak) (a) t c 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 160.0 180.0 200.0 25 50 75 100 125 150 175 p tot (w) t c 0 10 20 30 40 50 60 70 0 200 400 600 800 1000 qrr (nc) v r (v) 0 100 200 300 400 500 600 700 800 0.1 1 10 100 1000 c (pf) v r (v) C4D20120D rev. c
4 figure 9. transient thermal impedance 0.0001 0.001 0.01 0.1 1 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100e - 3 1 10 10.0 15.0 20.0 25.0 capacitive energy (uj) 0.0 5.0 0 200 400 600 800 1000 e c capacitive energy (uj) v r reverse voltage (v) typical performance 100 1000 i fsm (a) 10 1.e-05 1.e-04 1.e-03 1.e-02 tp(s) 1000 100 10 figure 7. typical capacitance stored energy figure 8. non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) t p (s) i fsm (a) t j = 25c t j = 110c v r (v) 25 20 15 10 5 0 0 200 400 600 800 1000 e c ( m j) 1e-05 1e-04 1e-03 1e-02 thermal resistance (?c/w) t (sec) C4D20120D rev. c
5 part number package marking C4D20120D to-247-3 c4d20120 recommended solder pad layout package dimensions package to-247-3 pos inches millimeters min max min max a .605 .635 15.367 16.130 b .800 .831 20.320 21.10 c .780 .800 19.810 20.320 d .095 .133 2.413 3.380 e .046 .052 1.168 1.321 f .060 .095 1.524 2.410 g .215 typ 5.460 typ h .175 .205 4.450 5.210 j .075 .085 1.910 2.160 k 6? 21? 6? 21? l 4? 6? 4? 6? m 2? 4? 2? 4? n 2? 4? 2? 4? p .090 .100 2.286 2.540 q .020 .030 .508 .762 r 9? 11? 9? 11? s 9? 11? 9? 11? t 2? 8? 2? 8? u 2? 8? 2? 8? v .137 .144 3.487 3.658 w .210 .248 5.334 6.300 x .502 .557 12.751 14.150 y .637 .695 16.180 17.653 z .038 .052 0.964 1.321 aa .110 .140 2.794 3.556 bb .030 .046 0.766 1.168 cc .161 .176 4.100 4.472 w x y z aa bb cc to-247-3 note: recommended soldering profles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering C4D20120D rev. c
6 6 v t r t diode model csd04060 vf t = v t + if*r t v t= 0.965 + (t j * - 1.3*10 - 3 ) r t= 0.096 + (t j * 1.0 6 *10 - 3 ) diode model note: t j = diode junction temperature in degrees celsius, valid from 25c to 175c v ft = v t +if*r t v t = 0.98+(t j * -1.71*10 -3 ) r t = 0.040+(t j * 5.32*10 -4 ) C4D20120D rev. c copyright ? 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your cree representative or from the product documentation sections of www.cree.com. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemi - cal agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffc control systems. notes
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